By Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly(auth.)
- Bridges the distance among gadget modelling and analog circuit layout.
- Includes devoted software program allowing real circuit layout.
- Covers the 3 major versions: BSIM3, version nine &, and EKV.
- Presents functional tips on equipment improvement and circuit implementation.
- The authors provide a mix of intensive educational and business adventure.
Chapter 1 MOSFET machine Physics and Operation (pages 1–45):
Chapter 2 MOSFET Fabrication (pages 47–67):
Chapter three RF Modeling (pages 69–117):
Chapter four Noise Modeling (pages 119–139):
Chapter five right Modeling for exact Distortion research (pages 141–152):
Chapter 6 The BSIM4 MOSFET version (pages 153–207):
Chapter 7 The EKV version (pages 209–221):
Chapter eight different MOSFET versions (pages 223–241):
Chapter nine Bipolar Transistors in CMOS applied sciences (pages 243–247):
Chapter 10 Modeling of Passive units (pages 249–262):
Chapter eleven results and Modeling of method version and machine Mismatch (pages 263–278):
Chapter 12 caliber insurance of MOSFET versions (pages 279–286):
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Extra info for Device Modelling for Analog and RF CMOS Circuit Design
However, the saturation voltage will now be identical to the drain-source voltage that initiates velocity saturation at the drain side of the channel. 51), this occurs when F (L) = Fs . 55) where VL = Fs L = Lvs /µn . The Meyer VSM leads to a much more complicated relationship for VSAT . 55) may be For large values of VL such that VL expanded into a Taylor series, yielding the previous long-channel result for the SCCM without velocity saturation. 4 µm. Hence, velocity saturation is certainly important in modern MOSFETs with gate lengths typically in the deep submicrometer range.
Although charge conservation is not assured in the Meyer model, the resulting errors in circuit simulations are usually small, but can in some cases lead to serious errors. The unified transcapacitances needed for the complete Ward–Dutton model can be obtained along the same lines as described for CGS and CDS . The accuracy of the model depends on the quality of the charge and current models used and on the partitioning of the inversion charge between the source and the drain terminal. 3 Non-quasi-static modeling For very high-frequency operation of the MOSFET, comparable to the inverse carrier transport time of the channel (non-quasi-static (NQS) regime), we have to consider the temporal relaxation of the inversion and depletion charges.
Likewise, the holding time in dynamic memory circuits is affected by the level of subthreshold current. To correctly model the subthreshold operation of MOSFETs, we need a charge control model for this regime. Also, to avoid convergence problems when using the model in circuit simulators, it is preferable to use a UCCM that covers both the above- and belowthreshold regimes with continuous expressions. 4 for the purpose of accurately describing the inversion charge density in MOS structures (Lee et al.
Device Modelling for Analog and RF CMOS Circuit Design by Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly(auth.)